Si4455
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Rev 1.1
相关PDF资料
SI4462DY-T1-GE3 MOSFET N-CH 200V 1.15A 8-SOIC
SI4463-915-DK KIT DEV WIRELESS SI4463 915MHZ
SI4465ADY-T1-GE3 MOSFET P-CH 8V 13.7A 8SOIC
SI4466DY-T1-GE3 MOSFET N-CH 20V 9.5A 8-SOIC
SI4470EY-T1-GE3 MOSFET N-CH D-S 60V 8-SOIC
SI4472DY-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC
SI4477DY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
SI4483EDY-T1-GE3 MOSFET P-CH D-S 30V 8-SOIC
相关代理商/技术参数
Si4455-B1A-FMR 功能描述:射频收发器 Si4455 EZRadio Transceiver RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
SI4455-B1A-GM 制造商:Silicon Laboratories Inc 功能描述:SI4455 EZRADIO TRANSCEIVER - Bulk
SI4455-C2A-GM 功能描述:IC RF TxRx + MCU General ISM < 1GHz 284MHz ~ 960MHz 20-VFQFN Exposed Pad 制造商:silicon labs 系列:- 包装:托盘 零件状态:有效 类型:TxRx + MCU 射频系列/标准:通用 ISM < 1GHz 协议:- 调制:FSK,GFSK,OOK 频率:284MHz ~ 960MHz 数据速率(最大值):500kbps 功率 - 输出:13dBm(最小值) 灵敏度:-115dBm 存储容量:- 串行接口:SPI GPIO:4 电压 - 电源:1.8 V ~ 3.6 V 电流 - 接收:10.9mA 电流 - 传输:19mA ~ 24mA 工作温度:-40°C ~ 85°C 封装/外壳:20-VFQFN 裸露焊盘 标准包装:490
SI4455-C2A-GMR 功能描述:IC RF TXRX+MCU ISM<1GHZ 20-VFQFN 制造商:silicon labs 系列:* 包装:剪切带(CT) 零件状态:在售 封装/外壳:20-VFQFN 裸露焊盘 标准包装:1
SI4455DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 150-V (D-S) MOSFET
SI4455DY-T1-E3 功能描述:MOSFET 150V 8.9A 5.9W 295mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4455DY-T1-GE3 功能描述:MOSFET 150V 8.9A 5.9W 295mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4456DY-T1-E3 功能描述:MOSFET 40V 33A 7.8W 3.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube